InSb device manufacturing by anodic oxidation

Details InSb device manufacturing by anodic oxidation InSb device manufacturing by anodic oxidation

1988-03-22

1989-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

H01L 21316

Patent

active

048638803

ABSTRACT:
A method of manufacturing an InSb device that uses an anodic oxide layer as a structural element, utilizing a voltage-controlled mechanism to control the thickness of the anodic oxide layer formation, and in which the anodization time under an anodization limiting voltage is not less than 10 seconds and not more than 20 minutes.

REFERENCES:
patent: 4128681 (1978-12-01), Kotera et al.
Davydov et al., Soviet Microelectronics vol. 12, No. 1 (1983), pp. 25-29.
"InSb-MAOS Structure Fabricated by Anodization and Sputtering", H. Fujisada, Japanese Journal of Applied Physics, vol. 26, No. 7, Jul. 1987, pp. L1079-L1081.
"Formation of Very Thin Anodic Oxide of InSb", H. Fujisada et al., Japanese Journal of Applied Physics, vol. 22, No. 8, Aug. 1983, pp. L525-527.

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