Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1992-06-03
1993-09-21
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257355, 257367, 257577, 257773, H01L 2906, H01L 2978, H01L 2972, H01L 2348
Patent
active
052472019
ABSTRACT:
An integrated circuit has an input, a terminal for a reference potential, and a semiconductor substrate. An input protection structure for the integrated circuit is disposed in the semiconductor substrate and is connected between the input and the terminal for a reference potential. The input protection structure includes at least one transistor and an integrated diode. The at least one transistor has a collector in the form of a buried zone connected to the input, an emitter in the form of at least one doped zone to be connected to the reference potential, the collector and emitter defining a collector-to-emitter path, and a base in the form of at least one doped zone being insulated except for electrical contact with the emitter and the collector. The integrated diode is formed by at least the buried zone and the semiconductor substrate and is connected parallel to the collector-to-emitter path of the transistor.
REFERENCES:
patent: 4100561 (1978-01-01), Ollendorf
patent: 4291319 (1981-07-01), Carinalli
patent: 4489342 (1984-12-01), Mayrand
patent: 4697202 (1987-08-01), Shey
D. C. Goldthorp et al., "An Integrated Circuit Composite PNPN Diode", ISDAM 1979, (Dec. 1979) pp. 180-183.
Carroll J.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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