Input protection circuit for MIS transistor

Details Input protection circuit for MIS transistor Input protection circuit for MIS transistor

1981-12-04

1984-05-15

Eisenzopf, Reinhard J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

307200B, 357 23, H02H 904

Patent

active

044491581

ABSTRACT:
An input protection circuit which protects the gate of a MIS transistor from breakdown due to an excessively high voltage being applied thereto. The input protection circuit includes a first resistor and a second resistor connected in series between a input terminal and a gate of the MIS transistor, a first protection transistor provided between a first connecting point between the first and second resistors and one side of the power supply, and a second protection transistor provided between a second connecting point between the second resistor and the gate of the MIS transistor the other side of the power supply. The first protection transistor has a large mutual conductance gm, while the second protection transistor has a low breakdown voltage. With this input protection circuit, even when the gate breakdown voltage of the transistor to be protected is lower than the breakdown voltage of the first protection transistor, the gate electrode is kept at a voltage lower than the gate breakdown voltage by means of the second protection transistor having a lower breakdown voltage.

REFERENCES:
patent: 3636385 (1972-01-01), Koepp
patent: 4061928 (1977-12-01), Kessler

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