Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1992-07-16
1994-04-05
Pellinen, A. D.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361 91, 361111, H02H 900, H02H 904, H02H 320
Patent
active
053010817
ABSTRACT:
A depletion-mode MESFET is connected between an RF input terminal and ground. The gate is connected to a negative reference voltage via a bias resistor and to ground via a capacitor. A detector couples the input terminal to the gate and includes first and second series diodes and a second resistor connected from between the first and second diodes to ground. A coil is connected between the input terminal and an output terminal connected to a GaAs integrated circuit. A Schottky diode limiter is connected to the output terminal for limiting the voltage of both positive and negative polarities that leak to the output terminal from the transistor.
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M. Shifrin et al., "High Power Control Components Using A New Monolithic FET Structure", IEEE 1989 Microwave and Millimeter-Wave monolithic Circuits Symposium, pp. 51-56.
Podell Allen F.
Stoneham Edward B.
Anderson Edward B.
Leja Ronald William
Pacific Monolithics
Pellinen A. D.
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