Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-02-02
1990-03-27
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 3072964, 365228, H03K 1730, H03K 19092
Patent
active
049123467
ABSTRACT:
An input/output IC gate circuit inserted in the input or output lines of an IC memory card contains at least one input stage, for one of the input or output lines, in which a first MOSFET, a second MOSFET and a third MOSFET are connected in series between an external power source line and a grounding line. The first MOSFET is in an ON state when the voltage of the input or output line is in the vicinity of that of a power source and in an OFF state when the voltage is at 0 V. The second MOSFET is in an OFF state when the voltage of the input or output line is in the vicinity of the power source and in an ON state when the voltage is at 0 V. The third MOSFET is on/off controlled by a control signal delivered from a level detection circuit. The third MOSFET is turned on when the voltage of the external power source line exceeds a predetermined value which is one-half the voltage of the data backup battery or above.
REFERENCES:
patent: 3859638 (1975-01-01), Hume, Jr.
patent: 4587640 (1986-05-01), Saitoh
patent: 4612461 (1986-09-01), Sood
patent: 4791323 (1988-12-01), Austin
patent: 4849660 (1989-07-01), Hayashi et al.
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Roseen Richard
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