Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2007-08-07
2007-08-07
Mottola, Steven J. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S311000
Reexamination Certificate
active
11088591
ABSTRACT:
Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.
REFERENCES:
patent: 4114105 (1978-09-01), Duncan
patent: 5117203 (1992-05-01), Tennyson
patent: 6586993 (2003-07-01), Macedo
Sharaf et al, “A Compact Approach for the Design of a Dual-Band Low-Noise Amplifier”, pp. 890-893, 2001 IEEE.
Lee et al., “A SiGe Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications”, 2003 IEEE.
Bang Ji-Hoon
Bhatia Rahul
Laskar Joy
Lee Chang-Ho
Lee Seong-Soo
Georgia Tech Research Corporation
Mottola Steven J.
The Farrell Law Firm
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