Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1991-03-29
1993-04-27
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
333 33, H03F 360
Patent
active
052066070
ABSTRACT:
In an input matching circuit adapted to be connected to an input circuit of a low noise amplifier, a matching point of impedance conversion is set to a point shifted from a mean value of variations of an optimum signal source impedance of the low noise amplifier so that a change of noise index is gentle even if the optimum signal source impedance of the low noise amplifier includes variations.
REFERENCES:
patent: 3940706 (1976-02-01), Stegens
patent: 4803446 (1989-02-01), Watanabe et al.
patent: 5010305 (1991-04-01), Shiga
Krauss, et al., "Solid State Radio Engineering," pp. 26-33, 1980.
Bharj, "17 GHz Low Noise GaAs FET Amplifier," Microwave Journal, pp. 121-126, vol. 27, No. 10, Oct. 1984.
Mottola Steven
Sumitomo Electric Industries Ltd.
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