Input circuit of semiconductor integrated circuit device

Details Input circuit of semiconductor integrated circuit device Input circuit of semiconductor integrated circuit device

1993-10-26

1995-06-06

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327434, 327306, 326 63, H03K 1716, H03K 19094

Patent

active

054225922

ABSTRACT:
Reliability related problems such as destruction of the insulation film and shortened operating life of the MOSFET are prevented in a case where the voltage of an input signal is larger than a power source voltage for a semiconductor integrated circuit device. Where the voltage of an input signal which is received at an input signal terminal (3) is larger than a power source voltage V.sub.DD1, by causing a voltage drop between source-drain of an N channel MOS transistor (Tr4) which has a gate electrode fixed at the power source voltage V.sub.DD1, the voltage of the input signal is shifted. The shifted voltage is then applied to a gate electrode of an N channel MOS transistor (Tr2). That is, the voltage of the input signal is not directly applied to the gate electrode of the N channel MOS transistor (Tr2). Thus, when the voltage of the input signal is larger than the power source voltage for the semiconductor integrated circuit device, by shifting the voltage of the input signal and thereby preventing application of an excessively large voltage to a gate insulation film, enhanced operation reliability is attained.

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Proceedings of the IEEE 1992 Custom Integrated Circuits Conference, May 1992, Makoto Takahashi, et al., "3.3V-5V Compatible I/O Circuit Without Thick Gate Oxide", 8 pages.

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