Input circuit of MOS-type integrated circuit elements

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307453, 307578, 307279, 307290, H03K 1710, H03K 3356, H03K 19096

Patent

active

046510281

ABSTRACT:
An input circuit of MOS integrated circuit elements for a signal transmitting circuit having a first enhancement-mode MOS field-effect transistor, the gate thereof being connected to a power source and the drain thereof being connected to a first action signal, a second enhancement-mode MOS field-effect transistor, the drain thereof being connected to said power source, and a depletion-mode MOS field-effect transistor, the gate and source thereof being connected to each other, the source of said first enhancement-mode MOS field-effect transistor being connected to the gate of said second enhancement-mode MOS field-effect transistor, the source of said second enhancement-mode MOS field-effect transistor being connected to the drain of said depletion-mode MOS field-effect transistor, the source of the depletion-mode MOS field-effect transistor being connected to the signal transmitting circuit and a boost capacitor being connected between the gate of said second enhancement-mode MOS field-effect transistor and a second action signal to result in a potential at approximately the level of the power source at a node between the second enhancement-mode MOS field-effect transistor and the depletion-mode MOS field-effect transistor.

REFERENCES:
patent: 3959781 (1976-05-01), Mehta et al.
patent: 4071784 (1978-01-01), Maeder et al.
patent: 4190897 (1980-02-01), Someshwar
patent: 4379974 (1983-04-01), Plachno
patent: 4431927 (1984-02-01), Eaton, Jr. et al.
patent: 4461963 (1984-07-01), Koomen
patent: 4563595 (1986-01-01), Bose
Joynson et al., "Eliminating Threshold Losses in MOS Circuits by Bootstrapping Using Varactor Coupling", IEEE-JSSC, vol. SC-7, No. 3, pp. 217-224; 6/1972.

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