Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1981-10-22
1983-09-27
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307264, 307568, H03K 19094, H03K 19092, H03K 19017
Patent
active
044069570
ABSTRACT:
A first insulated-gate field-effect transistor (IGFET) having its conduction path connected between a first power terminal and an output terminal and a second IGFET of complementary conductivity to said first IGFET connected between the output terminal and a second power terminal. A selectively enabled level shift means coupled between the gate electrodes of the first and second IGFETs functions to substantially reduce the turn-on potential across the first transistor and to drive it off or to a high impedance state when a turn-on signal is applied to the second IGFET. The second IGFET can then easily and quickly drive the output to the voltage at the second power terminal. In response to an input turn-on signal for the first IGFET, it is pulsed on momentarily and the output is then clamped to the potential at the first power terminal.
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RCA Corporation
Schanzer Henry I.
Tripoli Joseph S.
Zazworsky John
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