Input and output isolating diode for power dissipation...

Details Input and output isolating diode for power dissipation... Input and output isolating diode for power dissipation...

2002-12-26

2008-05-27

Sherry, Michael (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific quantity comparison means

C361S018000

Reexamination Certificate

active

07379282

ABSTRACT:
The present invention is a method and system for providing improved isolation for power supplies while minimizing power dissipation. A body diode of a MOSFET may be utilized with a comparator circuit. The comparator circuit may detect current flow across the MOSFET and may turn the MOSFET on. This may shunt the diode with a low drain to source resistance limiting power dissipation across the diode to an amount of the drain to source current squared (Ids2) times the drain to source resistance of the MOSFET when on (RDSon). Use of the comparator circuitry may reduce the time delay associated with turning the MOSFET off to prevent a high reverse inrush current within a power supply.

REFERENCES:
patent: 5686814 (1997-11-01), Wierzbicki
patent: 5811895 (1998-09-01), Suzuki et al.
patent: 5945816 (1999-08-01), Marusik
patent: 6281724 (2001-08-01), Ellis
patent: 6420906 (2002-07-01), Kohda
patent: 6462434 (2002-10-01), Winick et al.

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