InP:Te Protective layer process for reducing substrate dissociat

Details InP:Te Protective layer process for reducing substrate dissociat InP:Te Protective layer process for reducing substrate dissociat

1984-10-17

1985-09-10

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, H01L 23208

Patent

active

045404500

ABSTRACT:
In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellurium to a concentration of about high 10.sup.18 to low 10.sup.19.

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patent: 4439399 (1984-03-01), Hawrylo

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