InP solar cell with window layer

Details InP solar cell with window layer InP solar cell with window layer

1992-10-02

1994-06-21

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 437 5, 257 76, 257434, 257631, H01L 3106

Patent

active

053225732

ABSTRACT:
The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or "window" layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

REFERENCES:
patent: 4591654 (1986-05-01), Yamaguchi et al.
Aina et al, Appln. Phys. 53(17), pp. 1620-1622 (Oct. 1988).
Landis et al., IEEE Transactions on Electron Devices, vol. 37, No. 2 (1990).
R. K. Jain et al, Appl. Phys. Lett., vol. 59, pp. 2555-2557 (Nov. 1991).
L. Aina et al, Appl. Phys. Lett., vol. 51, p. 1637 (Nov. 1987).
M. B. Spitzer et al, Conference Record, 21st IEEE Photovoltaic Specialists Conf. (May 1990), pp. 196-206.

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