1990-07-31
1991-10-01
Mintel, William
357 60, 357 59, 357 30, 357 2, H01L 29161
Patent
active
050538357
ABSTRACT:
An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAs has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.
REFERENCES:
patent: 4561916 (1985-12-01), Akiyama et al.
Razeghi et al., "First Room-Temperature CW Operation of a GaInAsP/InP Light-Emitting Diode," Appl. Phys. Lett. 53(10), Sep. 5, 1988, pp. 854-855.
Razeghi et al., "High-Quality GaInAsP/InP Heterostructures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition on Silicon Substrates," Appl. Phys. Lett. 52(3), Jan. 18, 1988, pp. 209-211.
Crumbaker et al., "Growth of InP on Si Substrates by Molecular Beam Epitaxy," Appl. Phys. Lett. 54(2), Jan. 9, 1989, pp. 140-142.
Kaminishi, "GaAs on Si Technology," Solid State Technology, Nov. 1987, pp. 91-97.
Akiyama et al., "Growth of High Quality GaAs Layers on Si Substrates by MDCVD," Journal of Crystal Growth 77 (1986) 490-497.
Uchida et al., "InP Solar Cell (ii); Direct Growth of InP on Si Substrate and Junction Formation", Preprint of Symposium of Japanese Society of Applied Physics, 1986 Autumn, p. 706, No. 30, P. D-6; p. 706.
Akiyama Masahiro
Horikawa Hideaki
Manzo Edward D.
Mintel William
OKI Electric Industry Co., Ltd.
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