InP/InGaAs monolithic integrated photodetector and heterojunctio

Details InP/InGaAs monolithic integrated photodetector and heterojunctio InP/InGaAs monolithic integrated photodetector and heterojunctio

1990-07-30

1991-11-05

Mintel, William

357 43, 357 34, 357 56, 357 16, 357 55, 357 60, H01L 2714

Patent

active

050634267

ABSTRACT:
A monolithic integrated photoreceiver comprising a p-i-n photodiode and a heterojunction bipolar transistor is realized in a structural configuration that allows the photonics and electronics to be separately optimized in addition to maintaining materials compatibility. These desirable features are accomplished by growing the epilayers of the photodiode and heterojunction bipolar transistor in a single epitaxial growth run. The p-i-n epilayers of the photodiode are grown first on a non-patterned substrate, followed by the direct epitaxial growth of the heterostructure bipolar transistor over the photodiode structure. Selective wet chemical etching over a portion of the entire structure was used in order to delineate the mesa structures of the p-i-n photodiode and transistor such that no contiguous conductive semiconductor layer exists therebetween.

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