InP:Fe Photoconducting device

Details InP:Fe Photoconducting device InP:Fe Photoconducting device

1982-12-06

1984-12-25

Albritton, C. L.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

357 30, 250211J, H01L 3108, H01L 2714

Patent

active

044907095

ABSTRACT:
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

REFERENCES:
patent: 3917943 (1975-11-01), Auston
patent: 3928865 (1975-12-01), Yamishita
patent: 4119840 (1978-10-01), Nelson
patent: 4158207 (1979-06-01), Bishop et al.
patent: 4300107 (1981-11-01), Copeland
patent: 4301362 (1981-11-01), Mourou
patent: 4347437 (1982-08-01), Mourou
patent: 4376285 (1983-03-01), Leonberger
"Evidence For Low Surface Recombination Velocity on n-Type InP", Casey et al., Applied Physics Letter, vol. 30, No. 5 (1977), pp. 247-249.
C. W. Isler, "Properties of InP Doped with Fe, Cr, or Co", in: Gallium Arsenide and Related Compounds, 1978.
Institute of Physics Conference, Serial #45, Chapter 2, pp. 144-153.

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