InP-based quantum-well laser

Details InP-based quantum-well laser InP-based quantum-well laser

1990-08-07

1991-08-13

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 6, H01S 319, H01S 330

Patent

active

050401866

ABSTRACT:
Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2-1.68 .mu.m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.

REFERENCES:
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patent: 4835778 (1989-05-01), Kafka et al.
patent: 4860297 (1989-08-01), Hayakawa et al.
patent: 4923279 (1990-05-01), Ainslie et al.
patent: 4967416 (1990-10-01), Esterowitz et al.
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"The Influence of Strain on the Small Signal Gain and Lasing Threshold of GaInAs/GaAs and GaAs/GaInAlAs Strained Layer Quantum Well Lasers", by G. Feak et al., Proceedings, IEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, pp. 362-372, 1-1989.
"The Properties of Long Wavelength Strained Layer Superlattice Lasers Grown by MOVPE", by K. J. Monserrat et al., Journal of Electronic Materials, vol. 18(4), 2-1989, pp. 475-480.
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"High Quantum Efficiency, High Power, Modulation Doped GainAs Strained-Layer Quantum Well Laser Diodes Emitting at 1.5 .mu.m", by P. J. A. Thijs, Electronics Letters, Dec. 7, 1989, vol. 25(25), pp. 1734-1737.
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"Graded-Index Separate-Confinement InGaAs/GaAs Strained-Layer Quantum Well Laser Grown by Metalorganic Chemical Vapor Deposition", D. Keketa, K. T. Chan, J. M. Ballantyne, L. F. Eastman, Appl. Phys. Lett. 49 (24), 1659-1660, Dec. 1986.
"GRIN-SCH AlGaInAs/InP Quantum-Well Lasers Emitting at 1300 nm", R. M. Ash, D. J. Robbins, J. Thompson, Electronics Letters, vol. 25, No. 22, pp. 1530-1531, Oct. 1989.
"High Quantum Efficiency, High Output Power 1.3 .mu.m GaInAsP Buried Graded-Index Separate-Confinement . . . ", A. Kasukawa, I. J. Murgatroyd, Y. Imajo, N. Matsumoto, T. Fukushima, H. Okamoto, S. Kashiwa, Japanese J. of Appl. Phys. vol. 28, No. 4, pp. L661-L663, Apr. 1989.
"1.3 .mu.m GaInAsP/InP Buried Heterostructure Graded Index Separate Confinement Multiple Quantum Well (BH-GRIN-SC-MQW) Lasers Entirely Grown . . . ", A. Kasukawa, Y. Imajo, T. Makino, Electronics Letters, vol. 25, No. 2, pp. 104-105, Jan. 1989.
"1.5 .mu.m GaInAs/GaInAsP Graded Index Separate Confinement Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes Grown by . . . ", A. Kasukawa, I. J. Murgatroyd, Y. Imajo, T. Namegaya, H. Okamoto, S. Kashiwa, Electronics Letters, vol. 25, No. 10, pp. 660-661, May 1989.
"Critical Layer Thickness in Strained Ga.sub.1-x In.sub.x As/InP Quantum Wells", H. Temkin, D. G. Gershoni, S. N. G. Chu, J. M. Vandenberg, R. A. Hamm, M. B. Panish, Appl. Phys. Lett., vol. 55, No. 16, pp. 1668-1670, Oct. 1989.
"Very Low Threshold InGaAs/InGaAsP Graded Index Separate Confinement Heterostructure Quantum Well Lasers Grown by Atmosphere Pressure Metal-Organic . . . ", T. Tanbun-Ek, R. A. Logan, H. Temkin, K. Berthold, A. F. J. Levi, S. N. G. Chu, Appl. Phys. Lett. (55(22) pp. 2283-2285, Nov. 1989.
"Reproducible Growth of Low-Threshold Single and Multiple Quantum Well InGaAs/InP Lasers by a Novel Interlayer Growth Technique", T. Tanbun-Ek, H. Temkin, S. N. G. Chu, R. A. Logan, Appl. Phys. Lett. 55(9), pp. 819-821, Aug. 1989.

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