Optical waveguides – Planar optical waveguide – Thin film optical waveguide
Reexamination Certificate
2006-07-04
2006-07-04
Le, Thien M. (Department: 2876)
Optical waveguides
Planar optical waveguide
Thin film optical waveguide
Reexamination Certificate
active
07072557
ABSTRACT:
The Group III–V quaternary, InAlGaAs is employed as a waveguide layer in optical components, such as In-P based array waveguide gratings (AWGs), avalanche photodiodes (APDs) or other optical components that contain a waveguide core in the InP regime. The deployment of InAlGaAs waveguides provides for high uniform photoluminescent (PL) emission wavelength across the wafer for InAlGaAs waveguides as compared to InGaAsP waveguides as now commonly employed in such optical devices or components. The use of an InAlGaAs waveguide core has particular utility when deployed in a photonic integrated circuit (PIC) such as an AWG with a plurality of outputs optically integrated with a plurality of photodetectors, such as APDs which are exemplified in this disclosure. In lieu of an InAlGaAs waveguide, combination layers of InGaAs/InAlAs, InGaAs/InAlGaAs or InAlAs/InAlGaAs may be employed or stacks of such layers to form the waveguides in the PIC chip.
REFERENCES:
patent: 4258375 (1981-03-01), Hsieh et al.
patent: 4717443 (1988-01-01), Greene et al.
patent: 4840916 (1989-06-01), Yasuda et al.
patent: 4870468 (1989-09-01), Kinoshita et al.
patent: 5075750 (1991-12-01), Kagawa
patent: 5432361 (1995-07-01), Taguchi
patent: 5521994 (1996-05-01), Takeuchi et al.
patent: 5552629 (1996-09-01), Watanabe
patent: 5689122 (1997-11-01), Chandrasekhar
patent: 5689358 (1997-11-01), Nakao et al.
patent: 5852304 (1998-12-01), Suzuki et al.
patent: 5863809 (1999-01-01), Koren
patent: 5910012 (1999-06-01), Takeuchi
patent: 5937274 (1999-08-01), Kondow et al.
patent: 6104047 (2000-08-01), Watanabe
patent: 6229162 (2001-05-01), Watanabe
patent: 6330378 (2001-12-01), Forrest et al.
patent: 6417528 (2002-07-01), Bond
patent: 6594409 (2003-07-01), Dutt et al.
patent: 6614086 (2003-09-01), Kim et al.
patent: 6785458 (2004-08-01), Mule′ et al.
patent: 6801555 (2004-10-01), DiJaili et al.
patent: 6813404 (2004-11-01), Kato
patent: 6853015 (2005-02-01), Tsuchiya
patent: 2001/0030327 (2001-10-01), Furushima
patent: 2002/0195616 (2002-12-01), Bond
patent: 2003/0169977 (2003-09-01), Xu et al.
patent: 63198321 (1988-08-01), None
patent: 02246180 (1990-10-01), None
patent: 4149512 (1992-05-01), None
patent: 10242563 (1997-09-01), None
Isao Watanabe et al., “Design and Perfromance of InAlGaAs/InAlAs Superlattice Avalanche Photodiodes”,Journal of Lightwave Technology, vol. 15(6). pp. 1012-1019, Jun. 1997.
J. M. Dalleasse et al., “Stability of AlAs in AlxGa1−xAs-AlAs-GaAs Quantum Well Heterostructures”,Applied Physics Letters, pp. 2436-2438, Jun. 11, 1990.
T. A. Richard et al., “Postfabrication Native-Oxide Improvement of the Reliability of Visible-Spectrum AlGaAs-In(AlGa)P p-n Heterostructure Diodes”,Applied Physics Letters, vol. 56(24), pp. 2972-2794, May 1995.
T. Nakata et al., “High-Speed and High-Sensitivity Waveguide InAlAs Avalanche Photodiodes for 10-40 GB/s Receivers”,The 14THAnnual Meeting of the IEEE Lasers&Electro-Optics Society(2001 IEEE/LEOS Annual Meeting Conference Proceedings), vol. 2, pp. 770-771, Nov. 14-15, 2001.
T. Nakata et al., “10Gbit/s High Sensitivity, Low-Voltage-Operation Avalanche Photodiodes with Thin InAlAs Multiplication Layer and Waveguide Structure”,Electronic Letters, vol. 36(24), pp. 2033-2034, Nov. 23, 2000.
Masaki Kohtoku et al., “Polarization Independent Semiconductor Arrayed Waveguide Gratings Using a Deep-Ridge Waveguide Structure”,IEICE Trans. Electron., vol. E81-C. pp. 1195-1204, Aug. 1988.
G.S. Kinsey et al., “Waveguide Avalanche Photodiode Operating at 1.55 mm with a Gain-Bandwidth Product of 320 GHz”,IEEE Photonics Technology Letters, vol. 13(8), pp. 842-844, Aug., 2001.
H. S. Kim et al., “Dark Current Reduction in APD with BCB Passivation”,Electronic Letters, vol. 37(7), pp. 455-457, Mar. 29, 2001.
J.C. Dries et al., “In0.5Ga0.47As/In0.52Al0.48As Separate Absorpotion. Charge. and Multiplication Layer Long Wavelength Avalanche Photodiode”,Electronic Letters, vol. 35(4), pp. 334-335, Feb. 18, 1999.
C. Lenox et al., “Thin Multiplication Region InAlAs Homojunction Avalanche Photodiodes”,Applied Physics Letters, vol. 73(6), pp. 783-784, Aug. 10, 1998.
J. C. Campbell et al., “Frequency Response of InP/InGaAsP/InGaAs Avalanche Photodiodes”,Journal of Lightwave Technology, vol. 7(5). pp. 778-784, May, 1989.
Toshiaki Kagawa et al., “InGaAsP-InAlAs Superlattice Avalanche Photodiode”, vol. 28(6), pp. 1419-1423, Jun. 1992.
Ravi Kuchibhotla et al., “Delta-Doped Avalanche Photodiodes for High Bit-Rate Lightwave Receivers”,Journal of Lightwave Technology, vol. 9(7), pp. 900-905, Jul. 1991.
L. E. Tarof et al., “High-Frequency performance of Separate Absorption Grading, Charge, and Multiplication InP/InGaAs Avalanche Photodiodes”,IEEE Photonics Technology Letters, vol. 13(8), Aug. 2001,IEEE Photonics Technology Letters, vol. 5(6), pp. 672-674 Jun., 1993.
Y. Hirayama et al., “Low Temperature and Rapid Mass tranport Techniques for GaInAsP/p-InP DFB Lasers”, Inst. Phys. Conf. Ser. No. 79: Chapter 3, pp. 175-180, Int. Symp. on GaAs and Related Components, Karuizawa, Japan, 1985.
Dentai Andrew G.
Kish, Jr. Fred A.
Nagarajan Radhakrishnan L.
Carothers, Jr. W. Douglas
Infinera Corporation
Labaze Edwyn
Le Thien M.
LandOfFree
InP-based photonic integrated circuits with Al-containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with InP-based photonic integrated circuits with Al-containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and InP-based photonic integrated circuits with Al-containing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3554121