InP-based HEMT with superlattice carrier supply layer

Details InP-based HEMT with superlattice carrier supply layer InP-based HEMT with superlattice carrier supply layer

1997-11-19

2000-08-08

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257194, H01L 29267, H01L 29205, H01L 29778

Patent

active

061005428

ABSTRACT:
A semiconductor device includes a semi-insulating substrate. A channel layer is formed on the semi-insulating substrate. An electron supply layer is formed on the semi-insulating substrate for generating a two-dimensional electron gas. The electron supply layer includes a doped superlattice layer. The superlattice layer includes layers of In.sub.X Al.sub.1-X As and layers of In.sub.Y Al.sub.1-Y As which alternate with each other, where 0.ltoreq.X.ltoreq.1.0 and 0.ltoreq.Y.ltoreq.1.0, and X differs from Y.

REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 4833508 (1989-05-01), Ishikawa et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 5449928 (1995-09-01), Matsugatani et al.

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