Inorganic light emitting diode

Details Inorganic light emitting diode Inorganic light emitting diode

1999-06-25

2000-08-29

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 313502, 313503, 313509, H01L 3300, H05B 3300

Patent

active

061112747

ABSTRACT:
An object of the invention is to provide a light emitting diode which enables relatively easy fabrication of large-area displays and is applicable to thin, long life, low cost, full color displays too. The object is attained by a light emitting diode comprising a positive electrode, a negative electrode, an inorganic light emitting layer between the electrodes exhibiting at least electroluminescence, an inorganic electron transporting layer between the inorganic light emitting layer and the negative electrode comprising as a main component at least one oxide selected from among strontium oxide, magnesium oxide, calcium oxide, lithium oxide, rubidium oxide, potassium oxide, sodium oxide, and cesium oxide, and an inorganic hole transporting layer between the inorganic light emitting layer and the positive electrode, the inorganic hole transporting layer being an inorganic insulative hole transporting layer comprising an oxide of silicon and/or germanium as a main component.

REFERENCES:
patent: 5554449 (1996-09-01), Tonomura et al.
patent: 5589733 (1996-12-01), Noda et al.
patent: 5625255 (1997-04-01), Watanabe
patent: 5675217 (1997-10-01), Kang
patent: 5952779 (1999-09-01), Arai et al.
patent: 5969474 (1999-10-01), Arai

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