Inorganic article for crystal growth and liquid-phase epitaxy ap

Details Inorganic article for crystal growth and liquid-phase epitaxy ap Inorganic article for crystal growth and liquid-phase epitaxy ap

1990-09-25

1992-12-08

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

118412, 118415, 156607, 156624, 156DIG83, B01D 900

Patent

active

051696088

ABSTRACT:
An inorganic article used as a container for holding a solution for crystal growth according to the present invention is provided by filling the pores of substrate having a porous inorganic structure with an inorganic material which has a melting point of 400.degree. to 900.degree. C. A liquid-phase epitaxy apparatus according to the present invention is comprised of a crucible made of the inorganic article or from a material selected from P-BN, quartz and sapphire and has an arrangement with less sliding contact. Thus, the dispersion of diffusive elements contained in a solution during the epitaxial growth is prevented. Accordingly, both the article and the apparatus of the present invention permit growth of crystals having high quality and less structural defects, thus contributing to the production of a semiconductor device made of materials having high vapor pressure.

REFERENCES:
patent: 3615928 (1971-10-01), Wagner et al.
patent: 3647578 (1972-03-01), Barnet et al.
patent: 3741817 (1973-06-01), Bienert et al.
patent: 3996891 (1976-12-01), Isawa et al.
patent: 4528163 (1985-07-01), Albrect

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