Inner stripe semiconductor laser with stepped channel

Details Inner stripe semiconductor laser with stepped channel Inner stripe semiconductor laser with stepped channel

1985-03-21

1987-05-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

046637621

ABSTRACT:
An inner stripe with self-aligned saturable-absorber structure semiconductor laser comprises a semiconductor substrate of a first conductivity type; a semiconductor current-blocking layer (CBL) of a second conductivity type formed on the substrate and having a stepped channel composed of an optical-guiding channel and current-restricting channel which is grooved at the bottom of the optical-guiding channel through the CBL into the substrate; a semiconductor cladding layer of a first conductivity type formed over the CBL to bury the stepped channel; a semiconductor active layer of a first or second conductivity type formed on the cladding layer; and a semiconductor cladding layer of a second conductivity type formed on the active layer, whereby laser noises can be markedly suppressed through wide temperature fluctuations and through the optical feedback range.

REFERENCES:
S. Yamamoto et al., "Visible GaAlAs V-Channeled Substrate Inner Stripe Laser with Stabilized Mode Using p-GaAs Substrate", APL 40(5), Mar. 1, 1982, pp. 372-374.
Japanese Patent Disclosure (Kokai) No. 52-90280; R. Matsumoto; Jan. 22, 1976.
T. Hayakawa et al., "Highly Reliable and Mode-Stabilized Operation in V-Channeled Substrate Inner Stripe Lasers on p-GaAs Substrate Emitting in the Visible Wavelength Region", J. Appl. Phys. 53 (11), pp. 7224-7234, Nov., 1982.

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