Ink-jet printhead fabrication

Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead

Reexamination Certificate

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Details

C438S672000, C257SE21620, C257SE21621

Reexamination Certificate

active

07569404

ABSTRACT:
A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

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patent: 7037736 (2006-05-01), Chavarria et al.
patent: 2002/0130371 (2002-09-01), Bryant et al.

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