Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead
Reexamination Certificate
2006-01-27
2009-08-04
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Manufacture of electrical device controlled printhead
C438S672000, C257SE21620, C257SE21621
Reexamination Certificate
active
07569404
ABSTRACT:
A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
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Bengali Sadiq S.
Chavarria Victorio A.
Enck Ronald L.
Hewlett--Packard Development Company, L.P.
Hoang Quoc D
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