Injection-type semiconductor laser

Details Injection-type semiconductor laser Injection-type semiconductor laser

1979-10-09

1981-10-27

Davie, James W.

Oscillators

Molecular or particle resonant type

H01S 319

Patent

active

042976529

ABSTRACT:
A semiconductor laser having a double heterostructure configuration is provided with a light waveguide layer extending between a pair of mirrors. A thin active layer is disposed adjacent to the waveguide layer, and is formed in the shape of a stripe having a width of approximately 5 .mu.m. The stripe is shorter in axial length than the waveguide, such that the ends of the stripe are spaced from the mirrors by a distance of 30 to 60 .mu.m.

REFERENCES:
patent: 3978426 (1976-08-01), Logan et al.

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