Injection lasers with short active regions

Details Injection lasers with short active regions Injection lasers with short active regions

1982-01-08

1984-07-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 50, H01S 319

Patent

active

044610076

ABSTRACT:
An injection laser includes a plurality of contiguous semiconductor layers deposited on a substrate, one of the layers being an active layer and having a lower bandgap and higher index of refraction relative to at least cladding layers immediately adjacent to the active layer. The active layer is provided with an active region to permit carrier recombination and support radiation propagating under lasing conditions in a optical waveguide cavity established between transverse end facets of the laser. Means is incorporated on and into the surface of the laser to form a current confinement region to the active region. The extremities of the active region fall short of the end facets so that the regions of the active layer between the active region function as a passive waveguide for the propagating radiation in the optical cavity. The laser is characterized in that the active region is an active region strip having a length less than the total length of both of the passive waveguide regions formed at the ends of the active region strip. More than one laser cavity may be formed on the same substrate so that several active regions are formed with separate current confinement regions forming a laser array device. Means are formed on the surface of the device to render the surface thereof electrically insulating except for the separate current confinement regions. Electrical contact means are formed on this insulating surface means to independently supply current to each of the current confinement regions without interfering with the electrical and optical operation of other array lasers. The employment of short active regions and consequentially the presence of the separate current confinement regions on the insulating surface of the laser array device permits the optical cavities of adjacent laser cavities in the array to be fabricated spatially closer to one another than previously possible while permitting independent electrical addressing of each the laser active regions without interfering with the operation of other array lasers. The active regions of adjacent array lasers may be offset relative to each other so that the packing density of lasers in the array is increased.

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