Injection lasers with quantum size effect transparent waveguidin

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 17, 372 46, 372 50, H01S 319

Patent

active

045464804

ABSTRACT:
An injection laser is provided with quantum size effect transparent waveguiding. The laser includes an active layer having an active region wherein carrier recombination occurs under lasing conditions. The active layer has passive waveguide end regions between the active region and the laser end facets that are sufficiently thin in layer thickness to form a transparent waveguide having a quantum well effect so that radiative recombination will not occur in these regions.

REFERENCES:
patent: 4297652 (1981-10-01), Hayashi et al.
R. Dingle, et al., "Quantum States of Confined Carriers in Very Thin Al.sub.x Ga.sub.1-x As-GaAs-Al.sub.x Ga.sub.1-x As Heterostructures", Physical Review Letters, vol. 33, No. 14, pp. 827-829, (Sep. 30, 1974).
R. D. Dupuis, et al., "Continuous 300.degree. K. Laser Operation of Single-Quantum-Well Al.sub.x Ga.sub.1-x As-GaAs Heterostructure Diodes Grown by Metalorganic Chemical Vapor Deposition", vol. 34, No. 4, pp. 265-267, (Feb. 15, 1979).
N. Holonyak, et al., "Phonon-Sideband MO-CVD Quantum-Well Al.sub.x Ga.sub.1-x As-GaAs Heterostructure Laser", Applied Physics Letters, vol. 34, No. 8, pp. 502-505, (Apr. 15, 1979).
N. Holonyak, et al., "Alloy Clustering in Al.sub.x Ga.sub.1-x As-GaAs Quantum-Well Heterostructures", Physical Review Letters, vol. 45, No. 21, pp. 1703-1706, (Nov. 24, 1980).
J. J. Coleman, et al., "High-Barrier Cluster-Free Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum-Well Heterostructure Laser", Applied Physics Letters", vol. 38, No. 2, pp. 63-65, (Jan. 15, 1981).
W. T. Tsang, "Device Characteristics of (AlGa)As Multiquantum Well Heterostructure Lasers Grown by Molecular Beam Epitaxy", Applied Physics Letters, vol. 38, No. 4, pp. 204-207, (Feb. 15, 1981).
H. O. Yonezu, et al., entitled "An AlGaAs Window Structure Laser", IEEE Journal of Quantum Electronics, vol. QE-15, No. 8, pp. 775-781, Aug. 1979.
Xerox Disclosure Journal, vol. 4, No. 5, p. 637, (Sep./Oct., 1979).
R. L. Hartman, et al., "The CW Elecro-Optical Properties of (Al,Ga)As Modified-Strip Buried Heterostructure Lasers", Journal of Applied Physics, vol. 51, No. 4, pp. 1909-1918, Apr. 1980.
W. T. Tsang, et al., "Current Injection GaAs-Al.sub.x Ga.sub.1-x As Multiquantum Well Heterostructure Lasers prepared by Molecular Beam Epitaxy", Applied Physics Letters, vol. 35, No. 9, pp. 673-675, (Nov. 1, 1979).
W. T. Tsang, et al., "Extremely Low Threshold (AlGa) As Modified Multiquantum Well Heterostructure Lasers Grown by Molecular Beam Epitaxy", Applied Physics Letters, vol, 39, No. 10, pp. 786-788, (Nov. 15, 1981).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Injection lasers with quantum size effect transparent waveguidin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Injection lasers with quantum size effect transparent waveguidin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Injection lasers with quantum size effect transparent waveguidin will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2224489

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.