Injection laser with integral modulator

Details Injection laser with integral modulator Injection laser with integral modulator

1974-03-05

1976-07-06

Bauer, Edward S.

Oscillators

Molecular or particle resonant type

331 945PE, 357 18, H01S 300

Patent

active

039684555

ABSTRACT:
The semiconductor target of a GEISHA or EBIC device is integrated with an jection laser diode to form a unitary structure. The electrons created in the GEISHA by impact ionization are swept directly into the injection laser to cause lasing action. This eliminates the need for transmission line connecting the GEISHA to the injection laser diode.

REFERENCES:
patent: 3747018 (1973-07-01), Tait et al.

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