Injection laser with at least one pair of monoatomic layers of d

Coherent light generators – Particular active media – Semiconductor

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357 4, 357 16, 357 17, H01S 319, H01L 29205, H01L 3300, H01L 4500

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050602349

ABSTRACT:
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped layers 45 and 46 are within intrinsic layer 43. The injection laser is constructed with a hetero structure.

REFERENCES:
patent: 3621466 (1971-11-01), Misawa
patent: 3882533 (1975-05-01), Dohler
patent: 4083062 (1978-04-01), Ohuchi et al.
patent: 4163237 (1979-07-01), Dingle
patent: 4205329 (1980-05-01), Dingle
patent: 4410902 (1983-10-01), Malik
patent: 4591889 (1986-05-01), Gossard
patent: 4644378 (1987-02-01), Williams
patent: 4791646 (1988-12-01), Lindsey et al.
patent: 4882609 (1989-11-01), Schubert et al.
Arnold et al., 320 Applied Physics Letters, Oct., No. 8, New York, U.S.A. High Performance Inverted and Large Current Double Interface Modulation Doped Field-Effect Transistors With The Bulb (Al, Ga) As Replaced by Superlattice at the Inverted Interface.
C. E. C. Wood et al., Complex Free-Carrier Profile Synthesis by "Atomic Plane" Doping of MBE GaAs, pp. 383-387, J. Appl. Phys. 51(1), Jan. 1980.
C. E. C. Wood et al., Hyper-Thin Channel M.B.E. GaAs Power F.E.T.'s By Single Atomic Plane Doping, pp. 16-3, International Electronic Devices Meeting, 1979.
D. A. T. Henderson et al., High Performance Inverted and Large Current Double Interface Modulation-Doped Field-Effect Transistors With the Bulk (Al, Ga) As Replaced by Superlattice at the Inverted Interface, pp. 902-904, Appl. Phys. Lett., vol. 45, No. 8, 15 Oct. 1984.
K. Yamaguchi et al., A New Short Channel MOSFET with an Atomic-Layer Doped Impurity Profile (ALD-MOSFET), pp. 267-270, 2419 Japanese Journal of Applied Physics. Supplements vol. 22 (1983).
R. J. Malik et al., Planar-Doped Barriers in GaAs By Molecular Beam Epitaxy pp. 836-838, Electronics Letters, 23rd Oct. 1980, vol. 16.
R. J. Malik et al., GaAs Planar-Doped Barrier Transistors Grown by Molecular Beam Epitaxy, pp. 87-96, Zie Voor Titel Boek, de 2e Pagina.
F. Capasso, Band-Gap Engineering Via Graded Gap, Superlattice, and Periodic Coping Structures: Applications to Novel Photodetectors and Other Devices, pp. 457-461, J. Vac. Scl. Technol. B1(2), Apr.-Jun. 1983.
D. A. B. Miller, Novel Hybrid Optically Bistable Switch: The Quantum Well Self-Electro-Optic Effect Device, pp. 13-15, Appl. Phys. Lett 45(1), Jul. 1984.
S. Tiwari et al., Compensating Charge Layers in High Electron Mobility Transistors IBM Technical Disclosure Bulletin, vol. 27, No. 9, Feb. 1985.

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