Injection laser manufacture

Details Injection laser manufacture Injection laser manufacture

1983-06-24

1985-04-09

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 148172, H01L 21208

Patent

active

045099960

ABSTRACT:
A method of making a channel substrate buried heterostructure InP/(In,Ga)(As,P) laser avoids the need to use two separate stages of epitaxial growth by using a channel in a (100) surface substrate 1 extending in the [011] direction with {111}B sides. This allows the channel to be made before the growth of an (In,Ga)(As,P) blocking layer 3 which can be grown under conditions which do not require the use of a mask to prevent nucleation on the channel sides. The same technique is also applicable to the manufacture of a terraced substrate laser incorporating a blocking layer.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4251298 (1981-02-01), Thompson
patent: 4287485 (1981-09-01), Hsieh
patent: 4321556 (1982-03-01), Sakuma
patent: 4366568 (1982-12-01), Shimizu et al.
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4380861 (1983-04-01), Sugino et al.
patent: 4429395 (1984-01-01), Olsen et al.

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