Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Patent
1993-09-30
1995-07-04
Loke, Steven Ho Yin
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
257288, 257368, 257476, H01L 27095, H01L 2948, H01L 2994, H01L 2976
Patent
active
054303230
ABSTRACT:
An injection control-type Schottky barrier rectifier, including: a semiconductor region having a first conductivity type; a first diffusion region, which is formed in the semiconductor region and which has a second conductivity type, the second conductivity type being different from the first conductivity type, for forming a depletion layer in the semiconductor region when a turn-off voltage is applied to the Schottky barrier rectifier; a second diffusion region, which is formed in the semiconductor region and which has the second conductivity type, for causing conductivity modulation in the semiconductor region when a turn-on voltage is applied to the Schottky barrier rectifier; a barrier electrode which is ohmically connected with the first diffusion region and which forms a Schottky junction with the surface of the semiconductor region which is opposite to the second diffusion region with respect to the first diffusion region; a gate insulator film formed on the surface of the semiconductor region between the first diffusion region and the second diffusion region; a gate electrode disposed in contact with the gate insulator film; a control terminal which is connected with the gate electrode and which applies an electrical voltage to the gate electrode to electrically connect or disconnect the first and second diffusion regions to or from each other; a main terminal connected to the barrier electrode; and a metal electrode disposed on the back surface of the semiconductor region.
REFERENCES:
patent: 5063428 (1991-11-01), Schlangenotto et al.
patent: 5081509 (1992-01-01), Kozaka et al.
Baliga, B. J., "Analysis of Junction-Barrier-Controlled Schottky (JSB) Rectifier Characteristics", pp. 1089-1093, Solid-State Electronics, vol. 28, No. 11, (1985).
Baliga, B. J., "Analysis of a High-Voltage Merged p-i-n/Schottky (MPS) Rectifier", pp. 407-409, IEEE Electron Device Ltrs., vol. EDL-8, No. 9, Sep. 1987.
Kumagai Naoki
Yamazaki Tomoyuki
Fuji Electric & Co., Ltd.
Loke Steven Ho Yin
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