Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-01-29
2008-01-29
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C438S095000, C257SE27004, C365S163000
Reexamination Certificate
active
07323707
ABSTRACT:
A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition cells, initially fabricated in the set or low resistance state, into the reset or high resistance state. In one advantageous embodiment, after such initialization and programming, the threshold voltage increase is eliminated so that the cells operate thereafter without the added threshold voltage.
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Intel Corporation
Kebede Brook
Trop Pruner & Hu P.C.
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