Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-05-20
2008-05-20
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S014000, C257S077000, C257SE51018, C438S022000, C438S105000
Reexamination Certificate
active
10332244
ABSTRACT:
A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed.
REFERENCES:
patent: 6121634 (2000-09-01), Saito et al.
patent: 6285698 (2001-09-01), Romano et al.
patent: 6984840 (2006-01-01), Kuramata et al.
patent: 10294532 (1998-04-01), None
Herzog et al., “Photoluminescence microscopy of InGaN quantum wells”, Appl. Phys. Lett. 70 (11), Mar. 1997.
Choi et al., “Fabrication of Efficient Blue Light-Emitting Diodes with InGaN/GaN Triangular Multiple Quantum Wells”, Abstract.
Nakamura et al., “The Blue Laser Diode”, Springer Verlag Berlin Heidelbert 1997, S. 209ff.
Harle et al., “GaN-based LEDs and lasers on SiC”, Phys. Stat. Sol. (a) 180 pp. 5-13 Mar. 2000.
Monemar B., “Optical Properties of GaN”, Semiconductors and Semimetals, vol. 50 (1998); ed. By Pankove J.I. and Moustakas T.D., pp. 305-368.
Edwards N. V. et al., “Analysis of strain in GaN on Al203and 6H-SiC near-bandedge phenomena”, Materials Research Society Symposium Proceedings vol. 395 (1996), pp. 405-410.
Gil B. et al., “Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry”, Phys. Rev. B (1995), pp. 17028-17031.
Lambrecht W.R.L. et al., “Electronic and optical properties of the group-III Nitrides, their heterostructures and alloys”, Materials Research Society Symposium Proceedings vol. 395 (1996), pp. 455-466.
Kim K. et al., “Electronic structure of GaN with strain and phonon distortions”, Phys. Rev. B 50 (1994), pp. 1502-1505.
Naumov A. et al., “Exciton recombination in ZnSexTe1-x/ZnTeQWs and ZnSexTe1-x epilayers grown by metalorganic vapour phase epitaxy”, Journal of Crystal Growth 138 (1994), pp. 595-600.
Rosenauer A. et al., “High resolution transmission electron microscopy determination of Cd diffusion in CdSe/ZnSe single quantum well structures”, Journal of Crystal Growth 152 (1995), pp. 42-50.
Baur Johannes
Brüderl Georg
Hahn Berthold
Härle Volker
Strauss Uwe
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Trinh Hoa B
Weiss Howard
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