Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-05-20
2008-05-20
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S014000, C257S077000, C257SE51018, C438S022000, C438S105000
Reexamination Certificate
active
07375377
ABSTRACT:
A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed.
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Baur Johannes
Brüderl Georg
Hahn Berthold
Härle Volker
Strauss Uwe
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Trinh Hoa B
Weiss Howard
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