InGaAsSbN photodiode arrays

Details InGaAsSbN photodiode arrays InGaAsSbN photodiode arrays

2011-03-29

2011-03-29

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S189000, C257SE31019

Reexamination Certificate

active

07915639

ABSTRACT:
Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.

REFERENCES:
patent: 4032951 (1977-06-01), De Winter et al.
patent: 2006-278397 (2006-10-01), None
Fu et al., “Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 um”, Journal of Vacuum Science Technology B vol. 22, No. 3, May/Jun. 2004 pp. 1463-1467.

Affiliated with

Also associated with

Rating

InGaAsSbN photodiode arrays does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with InGaAsSbN photodiode arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and InGaAsSbN photodiode arrays will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2745995