InGaAsP/GaAs diode laser

Coating processes – Electrical product produced

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427124, 4272552, 4272557, C23C 1600

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active

053841514

ABSTRACT:
High power diode lasers of the formula GaInP/InGaAsP on GaAs substrates which operate at powers up to 5.3W with increased power levels and efficiencies are disclosed. By increasing the thickness of the optical cavity of the heterostructure and by doping to a level of 10.sup.20 atoms/cm.sup.3 the cap layer surface with a p-type dopant such as diethyl zinc, increased power at an increased efficiency level is observed.

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