InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indi

Details InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indi InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indi

1997-02-14

1999-04-27

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 319

Patent

active

058987215

ABSTRACT:
An InGaAsP/AlGaAs/GaAs heterostructure laser diode includes an InGaAsP quantum well and at least a cladding region of AlGaAs while essentially avoiding the deleterious effects attributed to the presence of Al in heterostructure laser diodes. Embodiments with Al present in the cladding region and with Al present in both the waveguide and the cladding regions are described.

REFERENCES:
patent: 5088099 (1992-02-01), Chen et al.
patent: 5208183 (1993-05-01), Chen et al.
patent: 5260959 (1993-11-01), Hayakawa
patent: 5289484 (1994-02-01), Hayakawa
patent: 5413956 (1995-05-01), Watanabe et al.
patent: 5724462 (1998-03-01), Ido et al.

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