Ingaas semiconductor structures

Details Ingaas semiconductor structures Ingaas semiconductor structures

1987-12-30

1989-03-21

Carroll, J.

357 13, 357 16, 357 52, 357 55, H01L 2714, H01L 29161, H01L 2906

Patent

active

048148474

ABSTRACT:
An InGaAs semiconductor device implemented on a semiconductor substrate having a first major surface on which active semiconductor devices are to be formed, and a second major surface. An etch stop layer is provided on the first major surface. A layer of semiconductor material is provided on the etch stop layer and portions of the substrate are selectively removed to provide a pattern of apertures in the layer extending to the etch stop layer. Dopant species are provided through the second major surface to form active regions in the layer of semiconductor material. The resulting structure permits the integration of optoelectronic devices with photoelectronic devices on the same substrate.

REFERENCES:
patent: 3593067 (1971-07-01), Flynn
patent: 3604987 (1971-09-01), Assour
patent: 3617823 (1971-11-01), Hofstein
patent: 3689900 (1972-09-01), Chen
patent: 3735137 (1973-05-01), Bly
patent: 3792258 (1974-02-01), Sliker
patent: 3849678 (1974-11-01), Flynn
patent: 4142207 (1979-02-01), McCormack et al.
patent: 4143269 (1979-03-01), McCormack et al.
patent: 4547792 (1985-10-01), Sclar

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