InGaAs/InP type pin photodiodes

Details InGaAs/InP type pin photodiodes InGaAs/InP type pin photodiodes

1989-11-20

1991-10-01

James, Andrew J.

357 16, 357 55, 357 30, 357 58, 357 52, H01L 3300

Patent

active

050538373

ABSTRACT:
An InGasAs/InP type PIN photodiode including an n-InP substrate, an n-InGaAs layer arranged on a surface of the substrate and a p-InGaAs layer comprising a portion of the n-InGaAs layer diffused with a p-type impurity. A ring-like p-electrode is arranged to encircle the p-InGaAs layer and a portion of the p-InGaAs layer encircled by the p-electrode is formed to a recess having a depth of less than 2.0 .mu.m. In addition, the thickness of the p-InGaAs layer is formed to be larger than 3.0 .mu.m. The PIN photodiode is arranged so that light is introduced into the recess.

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