InGaAIN light-emitting device containing carbon-based...

Details InGaAIN light-emitting device containing carbon-based... InGaAIN light-emitting device containing carbon-based...

2007-07-16

2010-06-22

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S097000, C257SE33008, C257SE33068, C438S033000

Reexamination Certificate

active

07741632

ABSTRACT:
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.

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patent: 6521917 (2003-02-01), Takayama
patent: 6903364 (2005-06-01), Takayama
patent: 2002/0110282 (2002-08-01), Kraft
patent: 2004/0241447 (2004-12-01), Fukushima
patent: 2005/0006664 (2005-01-01), Inoue
patent: 2005/0161698 (2005-07-01), Takayama
patent: 2006/0255341 (2006-11-01), Pinnington et al.
patent: 2008/0157090 (2008-07-01), Thomson et al.
patent: 2007-35898 (2007-02-01), None

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