Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-06-29
1996-04-23
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 85, 257189, H01L 27142, H01L 29201, H01L 31101
Patent
active
055106277
ABSTRACT:
A quantum well infrared photodetector comprises multiple quantum well detectors formed within a single P-N structure forward-biased by an external voltage source, for directly converting infrared radiation having a wavelength in the range of approximately 4-15 .mu.m into visible radiation or near infrared radiation. Multiple quantum well detectors disposed between the P-N contact layers are comprised of alternating gallium arsenide (GaAs) quantum well layers, aluminum gallium arsenide (AlGaAs) barrier layers and alternatively, a blocking layer of aluminum arsenide (AlAs) positioned between a last aluminum gallium arsenide (AlGaAs) barrier layer and the N contact layer; and are forward-biased by the external voltage source in order to produce band-gap luminescence by radiative recombination of excess carriers representative of electrons and holes in the N contact layer when the P contact layer is illuminated with optical energy of incident infrared radiation.
REFERENCES:
patent: 4620214 (1986-10-01), Margalit et al.
patent: 4679068 (1987-07-01), Lillquist et al.
patent: 4807006 (1989-02-01), Rogers et al.
patent: 4822992 (1989-04-01), Bar-Joseph et al.
patent: 4828368 (1989-05-01), Efron et al.
patent: 4860068 (1989-08-01), Gossard et al.
patent: 4873555 (1989-10-01), Coon et al.
patent: 4914296 (1990-04-01), Reinhold et al.
patent: 5036371 (1991-07-01), Schwartz
patent: 5077593 (1991-12-01), Sato et al.
patent: 5160991 (1992-11-01), Delacourt et al.
patent: 5160992 (1992-11-01), Gerard et al.
patent: 5198682 (1993-03-01), Wu et al.
patent: 5238868 (1993-08-01), Elman et al.
patent: 5239186 (1993-08-01), McIver et al.
patent: 5296720 (1994-03-01), Wen et al.
Levine et al., "Broadband 8-12 .mu.m High-Sensitivity GaAs Quantum Well Iared Photodetector", Appl. Phys. Lett. 54 (26), 26 Jun. 1989, pp. 2704-2706.
Levine et al., "Bound-To-Extended State Absorption GaAs Superlattice Transport Infrared Detectors,", J. Appl. Phys. 64 (3), 1 Aug. 1988, pp. 1591-1593.
Levine et al., "High-Detectivity D*=1.0.times.10.sup.10 cm.sqroot.Hz/W GaAs/AlGaAs Multiquantum Well .lambda.=8, 3 .mu.m Infrared Detector", Appl. Phys. Lett. 53 (4), 25 Jul. 1988, pp. 296-298.
Levine et al., "High Sensitivity Low Dark Current 10 .mu.m GaAs Quantum Well Infrared Photodetectors", Appl. Phys. Lett., vol. 56, No. 9, 26 Feb. 1990, pp. 851-853.
Capasso et al., "New Quantum Photoconductivity And Large Photo-Current Gain By Effective-Mass filtering In A Forward-Biased Superlattice p-n Junction", Physical Review Letters, vol. 55, No. 10, 2 Sep. 1985, pp. 1152-1155.
Jackson, Jr. Jerome
Kalish Daniel
McDonnell Thomas E.
Stockstill Charles J.
The United States of America as represented by the Secretary of
LandOfFree
Infrared-to-visible converter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infrared-to-visible converter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared-to-visible converter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2310832