Infrared staring imaging array and method of manufacture

Details Infrared staring imaging array and method of manufacture Infrared staring imaging array and method of manufacture

1988-08-01

1992-07-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 3, 437 48, 357 24, 250332, H01L 3100

Patent

active

051302594

ABSTRACT:
Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 .mu.m spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).

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patent: 4410811 (1983-10-01), Koch
patent: 4439912 (1984-04-01), Pollard et al.
patent: 4705357 (1987-11-01), Yamazaki et al.

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