Infrared staring imaging array

Details Infrared staring imaging array Infrared staring imaging array

1988-08-01

1992-12-15

Buczinski, Stephen C.

Radiant energy

Infrared-to-visible imaging

Including detector array

358212, 35821311, 35821312, 257214, 257441, 257437, H01L 2500, H01L 2714, H01J 4014, H04N 314

Patent

active

051719940

ABSTRACT:
Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 .mu.m spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).

REFERENCES:
Baker et al, SPIE Staring IR Focal Plane Technology, vol. 267, pp. 80-85.
Dyck et al, SPIE Solid State Imaging Devices, vol. 116, 1977, pp. 19-23.
D. N. Pocock et al, Proc. DPIE Int. Soc. Opt. Eng., vol. 267, pp. 31-38, 1981.
D. N. Pocock et al, Proc. Soc. Photo-Optical Instr. Eng., vol. 217, pp. 120-138, 1980.
M. Gibbons et al, Proc. SPIE Int. Soc. Opt. Eng., vol. 443, p. 151, 1984.
A. Bahraman et al, IEDM Digest, p. 726, Dec. 1983.

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