Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-12-20
1997-06-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257218, 257219, 257220, 257221, 257224, 257227, H01L 27148, H01L 2968
Patent
active
056357389
ABSTRACT:
An infrared solid-state image sensing apparatus is provided with a plurality of photoelectric converting sections arranged vertically and horizontally in a matrix pattern on a semiconductor substrate of a first conducting type; a plurality of vertical CCDs which have first buried channels of a second conducting type and electrodes disposed thereon with an insulating film between and which are disposed adjacently to the photoelectric converting sections; and a horizontal CCD having a second buried channel of the second conducting type and electrodes disposed thereon with an insulating film between and which is disposed adjacently to one side of the vertical CCDs. The first and second buried channels are provided with a low-concentration region having a uniform diffusion depth. Further, the surface of each first buried channel is provided with a high-concentration region of the second conducting type having a higher concentration than that of the surface of the second buried channel.
REFERENCES:
patent: 4488038 (1984-12-01), Harrison et al.
Cohen et al, "Investigation of Semiconductor Schottky Barriers for Optical Detection and Cathodic Emission," Air force Cambridge Research Labs., Nov. 15, 1967.
Akagawa et al, "A 401K Pixel PtSi Schottky-barrier Infrared CCD Image Sensor," ITE Technical Report, vol. 18, No. 17, pp. 7-12, Mar. 1994.
Akagawa Keiichi
Shoda Masahiro
Tomofuji Tetsuya
Clark Jhihan B.
Nikon Corporation
Saadat Mahshid D.
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