Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Patent
1995-10-13
1997-06-17
Fields, Carolyn E.
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
250332, 25037008, H04N 533, G01J 520
Patent
active
056400136
ABSTRACT:
An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.
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"An Inexpensive Difusion Barrier Technology for Polycide Gate Electrodes with an SiN Layer Formed with ECR Nitrogen Plasma", Tetsuo Hosoya et al., NTT LSI Laboratories, Extended Abstract of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 422-424. No Month.
Ishikawa Tomohiro
Kaneda Osamu
Ueno Masashi
Fields Carolyn E.
Mitsubishi Denki & Kabushiki Kaisha
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