Infrared sensor device and manufacturing method thereof

Details Infrared sensor device and manufacturing method thereof Infrared sensor device and manufacturing method thereof

2005-12-13

2005-12-13

Gabor, Otilia (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C257S250000

Reexamination Certificate

active

06974953

ABSTRACT:
A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

REFERENCES:
patent: 5962854 (1999-10-01), Endo
patent: 6048092 (2000-04-01), Kimura et al.
patent: 6222454 (2001-04-01), Harling et al.
patent: 6335478 (2002-01-01), Chou et al.
patent: 6483111 (2002-11-01), Ishikawa et al.
patent: 6548879 (2003-04-01), Komobuchi et al.
patent: 6603160 (2003-08-01), Zhang
patent: 6608356 (2003-08-01), Kohyama et al.
patent: 2002/0009821 (2002-01-01), Moor et al.
patent: 8-285680 (1996-01-01), None
patent: 2000-88640 (2000-03-01), None
T. Ishikawa, et al., Part of the SPIE Conference on Infrared Technology and Applications XXV, vol. 3698, pp. 556-564, “Low-Cost 320×240 Uncooled IRFPA Using Conventional Silicon IC Process”, Apr. 1999.
A. Yagishita, et al., IEEE Transactions on Electron Devices, vol. 47, No. 5, pp. 1028-1034, “High Performance Damascene Metal Gate Mosfet's for 0.1 μm Regime”, May 2000.

Affiliated with

Also associated with

Rating

Infrared sensor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Infrared sensor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared sensor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3520605