Radiant energy – Infrared-to-visible imaging
Reexamination Certificate
2005-09-19
2009-08-04
Hannaher, Constantine (Department: 2884)
Radiant energy
Infrared-to-visible imaging
C250S332000
Reexamination Certificate
active
07569820
ABSTRACT:
An infrared sensor includes an imaging area including a thermal non-sensitivity pixel row, an optical non-sensitivity pixel row and a valid pixel row, and the infrared sensor including a column amplifier including a first amplifying transistor, a first clamp circuit, an integration capacitor, and a resetting part connected to the drain of the first amplifying transistor and a storage node of the integration capacitor, the column amplifier being connected to the signal lines, and amplifying a signal voltage generated in the signal line; a column buffer including a driving transistor, a drain of the driving transistor being connected to a source of the first amplifying transistor; a readout circuit connected to the storage node of the integration capacitor; and a signal generating circuit including a circuit configuration equivalent to that of the column amplifier and including a second amplifying transistor equivalent to the first amplifying transistor, a gate of the second amplifying transistor connected to a gate of the driving transistor.
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Tomohiro Ishikawa, et al., “Low-cost 320×240 uncooled IRFPA using conventional silicon IC process”, Part of the SPIE Conference on Infrared Technology and Applications XXV, vol. 3698, Apr. 1999, pp. 556-564.
Hannaher Constantine
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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