Infrared sensor

Details Infrared sensor Infrared sensor

1989-03-22

1990-07-03

Munson, Gene M.

357 15, 357 16, H01L 2714, H01L 3100, H01L 2948, H01L 29161

Patent

active

049395610

ABSTRACT:
An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si.sub.1-X Ge.sub.X epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.

REFERENCES:
patent: 4661829 (1987-04-01), Bean et al.
patent: 4725870 (1988-02-01), Bean et al.
patent: 4831428 (1989-05-01), Yamaka
"IrSi Schottky-Barrier Infrared Image Sensor" by N. Yutani et al., 1987 IEEE Int. Electron Devices Meeting, pp. 124-127.

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