1982-06-07
1985-01-15
James, Andrew J.
357 16, 357 32, 357 61, H01L 2714
Patent
active
044941331
ABSTRACT:
A photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.
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patent: 4374678 (1983-02-01), Castro
patent: 4377904 (1983-03-01), Chapman et al.
Igras et al., "Investigation of Ion Implanted Graded Gap (CdHgTe) Photodiodes", Electron Technology, 10, 4, pp. 63-70.
Chu et al., "High-Performance Backside-Illuminated Hg.sub.78 Cd.sub.22 Te/CdTe (.lambda.Cd=10 .mu.m) Planar Diodes", Appl. Phys. Lett., 37, 5, Sep. 1, 1980, pp. 486-488.
Itoh et al., "HgCdTe Photoconductive Detector Arrays", Fujitsu Sci. & Tech. J., vol. 16, No. 3, Sep. 1980, pp. 151-165.
Verie et al., "Cd.sub.x Hg.sub.1-x Te Infrared Photovoltaic Detectors", Applied Physics Letters, vol. 10, No. 9, pp. 241-243, May 1, 1967.
Dean Anthony B.
Farrow Robin F. C.
Migliorato Piero
White Anthony M.
Williams Gerald M.
James Andrew J.
Mintel William A.
The Secretary of State for Defence in Her Britannic Majesty's Go
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