Infrared semiconductor device with superlattice region

Details Infrared semiconductor device with superlattice region Infrared semiconductor device with superlattice region

1978-06-09

1979-07-31

Edlow, Martin H.

357 3, 357 19, 357 16, H01L 3300

Patent

active

041632389

ABSTRACT:
It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 4088515 (1975-04-01), Blakeslee
patent: 4103312 (1978-07-01), Esaki
Esaki, Physical Review Letter, vol. 33, No. 8, Aug. 19, 1974, pp. 495 et . q

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