Infrared ray sensor using silicon oxide film as infrared ray...

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Reexamination Certificate

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Reexamination Certificate

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07105819

ABSTRACT:
The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.

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S. Bauer, et al.; “Thin metal films as absorbers for infrared sensors”; Sensors and Actuators; A. 37-38; 1993; pp. 497-501.

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